Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) are moving towards commercial world as a replacement for hydrogenated amorphous silicon (a:Si:H) TFTs in multiple flat-panel applications. AOS TFTs differ from conventional CMOS electronic devices. Instead of using a bulk, crystalline semiconductor, AOS TFTs employ thin amorphous materials in which the channel layer is approximately 50 nm or less. This talk will review current understanding of AOS material properties, briefly go over AOS TFT device physics, discuss AOS TFT research activities in EECS at OSU, and speculate on future developments and applications of AOS TFT technology.