Semiconducting materials which can be ambipolarly doped are highly desir- able in many electronics applications, including use as solar cell materials. SnZrS3 is being investigated for the possibility of ambipolar doping, with potential applications as a solar cell absorber layer. This dissertation covers the synthesis of SnZrS3 and the related compound Sn2S3, as well as measure- ments of the optical bandgap, Seebeck coeffcient, and resistivity of pressed powder pellets for these materials. A reproducible synthesis method by solid state reaction of the elements is developed for SnZrS3. Bandgaps of 1.16-1.21 eV and 1.14-1.15 eV are found for SnZrS3 and Sn2S3 respectively. SnZrS3 is found to be natively p-type with a Seebeck coeffcient of +600-700 mVV/K. Pressed pellet resistivities of 13 Mohmcm for SnZrS3 and 216 kohmcm for Sn2S3 are measured. Preliminary doping studies are also carried out.